Transient Electro-Thermal Investigations Of Interconnect Structures Exposed To Mechanical Stress
VLSI CIRCUITS AND SYSTEMS II, PTS 1 AND 2(2005)
摘要
Investigations of state-of-the-art integrated circuit designs clearly show that the temperature in interconnect structures is becoming the dominant and straitening factor for system performance. In this work we combine three-dimensional transient electro-thermal simulations with a finite element formulation of the thermomechanical stress problem in order to study the evolution and development of mechanical stress in complex layered interconnect structures at different operating conditions.
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关键词
three-dimensional electro-thermal simulation, thermal stress simulation, promoting factors for electromigration, transient simulation, interconnect lines, vias, self-heating
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