Dielectric Dilatometry On Thin Teflon-Ptfe Films Prepared By Pulsed-Laser Deposition

Polytetrafluoroethylene (Teflon PTFE) films were grown by pulsed-laser deposition (PLD). Films prepared by ablation from press-sintered targets are found to be highly crystalline, with spherulite sizes adjustable over more than one order in magnitude by suitable thermal annealing. As revealed by dielectric dilatometry, PLD-PTFE films show characteristics remarkably similar to those of conventional PTFE, i.e. the same structural first-order phase transitions. Dielectric losses are low and indicate no tendency to film oxidation. PLD-PTFE films additionally show an excellent charge-stability, comparable and even superior to commercially available Teflon-PTFE foils. PLD-PTFE enlarges the family of Teflon materials and may thus become interesting for potential miniaturized electret devices. Furthermore, dielectric dilatometry provides an elegant means for the determination of the coefficient of thermal expansion (CTE) in thin nonpolar films.