Microscopic model for studying radiation degradation of electron transport and photodetection devices

A microscopic-level model is proposed for exploring degraded performance in electron transport and photodetection devices, based on pre-calculated results as initial conditions for meso-scale approaches, including ultra-fast displacement cascade, intermediate defect stabilization and cluster formation, and slow defect reaction and migration. The steady-state spatial distribution of point defects in a mesoscopic-scale layered system will be studied by taking into account the planar dislocation loops and spherical neutral voids as well. These theoretical efforts are expected to be crucial in fully understanding the physical mechanism for identifying defect species, performance degradations, and the development of mitigation strategies. Additionally, verification of the current model by device characterization is discussed.