Enhancement of photoluminescence from Cu-doped β-FeSi2/Si heterostructures

We have investigated photoluminescence (PL) behaviors of the Cu-doped -FeSi2 thin film/Si heterostructure. Pronounced enhancement of an intrinsic A band and an impurity-related C band emissions has been observed in all the Cu-doped samples. The photo-carrier injection (PCI)-PL measurements have revealed that the PL enhancement is attributed to dynamic process of migration of holes where a repeated trap process of holes can be controlled by Cu-doping.