Conformal doping of 3-D structures using sub-atmospheric CVD films

Tushar Mandrekar, Miguel Angel Lagunas Hernandez, Jing Hua, V Ton,Avneesh Bhatnagar,Shailendra Raj Mehta, S Venkataraman

2010 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE（2010）

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摘要

Applicability of SACVD for doping of 3-D structures was assessed on both flat substrates as well as patterned structures focusing on the optimization of dopant profile within the SACVD film. Boron and phosphorous doped ultra-shallow junctions of 6 and 10nm respectively are obtained with surface concentration in excess of 1E21 at/cc for this intrinsically conformal and damage-free technique

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关键词

silicon,process control,semiconductor doping,chemical vapour deposition,doping,annealing,boron,films,phosphorus

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