Identification of Vacancy-Like Defects in High-Rate Grown a-Si Before and After Light Soaking by Vepas

We show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.