Metal gate device with reduced oxidation of a high-k gate dielectricBrian S Doyle,Jack Kavalieros,Justin K Brask, Matthew V Mertz,Mark L Doczy,Suman Datta,Robert S Chaumag(2009)引用 31|浏览4暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要