Self-rectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory

To satisfy strict requirements of storage-class memory, a bipolar TaOx/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.