SAW characteristics of AlN/SiO 2 /3C-SiC layered structure with embedded electrodes

Qiaozhen Zhang,Tao Han,Gongbin Tang,Jing Chen,Kenya Hashimoto

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control（2016）

引用 31|浏览3

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摘要

A layered structure of aluminum nitride (AlN)/ silicon dioxide (SiO2)/cubic silicon carbide with embedded electrodes, which enables the growth of high-quality AlN thin films, is proposed and studied. The phase velocity, coupling factor, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element method. The simu...

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关键词

Aluminum nitride,III-V semiconductor materials,Electrodes,Couplings,Gratings,Substrates,Surface acoustic waves

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