Effects of substrate temperature on graphene grown on Ni foil via atmospheric pressure chemical vapor deposition

Multilayer graphene was grown on Ni foil(30 mu m) via atmospheric pressure chemical vapor deposition (APCVD) at different temperature of 800 degrees C, 900 degrees C, 1000 degrees C, we observe structural difference between the three process by in situ X-ray diffraction and Raman measurements, our experimental results show that temperature plays an important role on graphene growth, the growth rate is increased with the increasing temperature. Moreover, we found that at growth temperature of 900 degrees C, graphene has the best quality. These results will be helpful to better understanding the growth mechanism in the graphene growth process.