PARAMETERS OF TRAPPING CENTERS IN AMORPHOUS Se70Te30-xZnx THIN FILMS

Thermally stimulated currents have been measured at different heating rates (beta) in amorphous thin films of Se70Te30-xZnx (x = 0, 2, 4, 6, 8). A clear TSC peak occurs at a particular temperature that shift towards higher temperatures as heating rates (beta) is increased. The aim of this paper is to determine initial information about trap depth and trap concentration (Nt). The value of Nt decreases with increases in Zn concentration upto 2% and thereafter it increases with increase in Zn concentration.