A Novel Centrifuge CVD Reactor Yielding High Quality Polysilicon by Low-Energy Silane Pyrolysis

A novel design of a rotating CVD chamber for production of polysilicon by decomposition of monosilane is demonstrated. Initial results are most promising showing the potential for low energy consumption in combination with high product quality and reactant yield. In addition, the reactor effectively eliminates the wellknown problem of production of fines. The novel reactor design operates with silane (SiH4) that decomposes into solid silicon and hydrogen gas at a temperature of 600-700 oC. Silane is an alternative to the trichlorosilane gas which currently dominates the polysilicon industry. Of the two, silane has the best theoretical potential due to possible reactant yield and low process temperature. The current results shows that the centrifuge design can be a successful method to maximize the yield and circumvent known problems with silane gas reactors. The main advantage is that the centrifuge actively moves the heavy reactants to the desired deposition surfaces and the light gaseous products away from the same surfaces.