A New Read Method By Using Dibl Characteristics In Nitride Storage Device

L P Chiang,P A Chen,C H Hung, C P Tsao,H H Liao,C H Lin

2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS（2006）

引用 0|浏览3

暂无评分

摘要

A new read operation scheme by using the differential of the threshold voltage (or current) is proposed in nitride storage memory devices. By utilizing the DIBL characteristics between program state and erase state, the principle and application of this cell read operation either in single bit or in two bits is demonstrated. Finally, the application for multi-level operation is proposed.

查看译文

关键词

nonvolatile memory,threshold voltage,degradation,hot carriers,manufacturing,tellurium

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要