Heterogeneous Integration of a 300-mm Silicon Photonics-CMOS Wafer Stack by Direct Oxide Bonding and Via-Last 3-D Interconnection

A fully functional Si photonics and 65-nm complementary metal-oxide semiconductor (CMOS) heterogeneous three-dimensional (3-D) integration is demonstrated for the first time in a 300-mm production environment. Direct oxide wafer bonding was developed to eliminate voids between silicon on insulator photonics and bulk Si CMOS wafers. A via-last, Cu through-oxide via 3-D integration was developed for low capacitance electrical connections with no impact on the CMOS performance. The 3-D yield approaching 100% was demonstrated on >20,000 via chains.