High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metalKenichi Nakano,C A Bozada, T K Quach,Gregory C Desalvo, G David Via,Ross W Dettmer,Charles K Havasy,J Sewell,John L Ebel,J K Gillespiemag(1996)引用 37|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要