Optical And Structural Studies Of Compositional Inhomogeneity In Strain-Relaxed Indium Gallium Nitride Films

Lawrence H Robins,J T Armstrong,R B Marinenko,M D Vaudin,Charles Edward Bouldin,J C Woicik,A J Paul, W R Thurber,K Miyano,C A Parker,J C Roberts,S M Bedair, E L Piner,M J Reed,N A Elmasry, S M Donovan,S J Pearton

2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS（2000）

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摘要

The structural and optical properties of indium gallium nitride (InxGa1-xN) films with 0.04 更多

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关键词

indium,exafs,extended x ray absorption fine structure,x ray spectroscopy,cathodoluminescence,wide band gap semiconductors,x ray diffraction,absorption edge,electron probe microanalyzer,chemical vapor deposition,measurement uncertainty,full width at half maximum,second order,spectrum,spectroscopy

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