Ohmic contact of indium oxide as transparent electrode to n-type indium phosphide

Ohmic contacts of n-type indium phosphide (n-InP) with indium oxide (In2O3), a transparent conducting oxide (TCO), have been achieved. Hydrogen plasma surface pretreatment of the n-InP substrates (H-2-cleaned n-InP) prior to the deposition of In2O3 films, is the key to achieve Ohmic contact. Oxygen flow rate during the In2O3 film deposition, which equivalently determines its doping level, is the main tuning parameter for In2O3 thin films growth. Rapid thermal annealing process (RTP) at different temperatures was found to have little effects on the Ohmic contact type.