New Hole Trapping Characterization During NBTI in 65nm Node Technology with Distinct Nitridation Processing
2004 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT（2004）
Key words
MOSFET,hole traps,nitridation,semiconductor device measurement,thermal stability,1.4 to 1.6 nm,65 nm,DC NBTI characterization,MOSFET,NBTI degradation,SiO2-Si,combined stressing/measurement,gate-oxide nitridation NBTI effects,hole trapping/detrapping characterization,logic circuits,negative bias temperature instability,plasma nitridation,ultra-thin gate-oxides
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