A Highly Efficient Q-Band Mmic 2.8 Watt Output Power Amplifier Based On 0.15 Mu M Ingaas/Gaas Phemt Process Technology

A highly efficient and high power monolithic power amplifier operating at Q-band is presented utilizing 0.15 mu m pseudomorphic InGaAs/GaAs HEMT production process on 2-mil thick substrate. Over 42 to 46 GHz frequency range, the amplifier demonstrated maximum power of 2.8 watts (34.5 dBm) and power-added-efficiency of 23 to 26% when operated at 5 Volts and 250 ma/mm. The amplifier attained maximum PAE of 24 to 29% and power of 33.6 to 34 dBm when it is biased at 5 Volts and 125 ma/mm. At these power levels and power-added efficiencies, the amplifier exhibited power densities in excess of 430 mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low loss output combining network, the power amplifier has been able to attain state-of-the-art efficiency and power performance.