Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs

2015 IEEE Electric Ship Technologies Symposium (ESTS)(2015)

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摘要
This paper describes the design and implementation of the first functional medium-voltage impedance measurement unit capable of characterizing in-situ source and load impedances of dc- and ac-networks (4160 V ac, 6000 V dc, 300 A, 2.2 MVA) in the frequency range from 0.1 Hz-1 kHz. It comprises three power electronics building blocks, each built using SiC MOSFET H-bridges, features great reconfigurability, and allows both series and shunt perturbation injection in order to achieve accurate impedance characterization of the Navy's shipboard power systems. With extraordinary advantages featured by the power electronics building block modular concept, and unconventional power processing benefits offered by SiC semiconductors, development of the unit shown in this paper unquestionably enables both, improvement of the existing, and design of the future, stable and reliable electrical Navy shipboard platforms with advanced electrical energy generation and modern distribution architecture.
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关键词
modern distribution architecture,advanced electrical energy,unconventional power processing,Navy shipboard power system,series perturbation injection,shunt perturbation injection,MOSFET H-bridges,DC network,AC network,load impedance,in-situ source,MOSFET PEBB,modular scalable medium voltage impedance measurement unit,frequency 0.1 Hz to 1 kHz,voltage 10 kV,SiC
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