Performance Optimization Of Room Temperature Deflection Transistors Through Modified Geometry
2008 1ST MICROSYSTEMS AND NANOELECTRONICS RESEARCH CONFERENCE(2008)
摘要
In this paper, the current status of the Ballistic Deflection Transistor (BDT) project is described. The project focuses on a development of a new class of devices based on the steering of the electron flux and the ballistic deflection effect. The results of the latest experiments show significant current response improvement through optimized geometry modifications.
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关键词
Ballistic Transport,Diffusive Transport,Deflection Transistors,Current Steering
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