Manufacturing method of semiconductor memory device esp. chain-FeRAM store, involves forming passivation zone and surface zone from this extending mainly vertically in structureBruchhaus Rainer, Enders Gerhard,Hartner Walter, Kroenke Matthias,Mikolajick Thomas,Nagel Nicolas, Roehner Michaelmag(2003)引用 25|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要