300 mm InGaAsOI substrate fabrication using the Smart Cut^TM technology

S Sollier,J Widiez,Gweltaz Gaudin,F Mazen,T Baron,Mickael Martin, M C Roure,P Besson, Carlos Morales,E Beche,F Fournel, S Favier, A Salaun,Patrice Gergaud, M Cordeau, C Veytizou,Ludovic Ecarnot,D Delprat,Ionut Radu,Thomas Signamarcheix

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)（2015）

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摘要

In this work we demonstrate for the first time 300 mm InGaAs on Insulator (InGaAs-OI) substrates. A 30 nm thick InGaAs layer was successfully transferred using low temperature Direct Wafer Bonding (DWB) and the Smart Cut ^TM technology. The epitaxial growing process has been optimized to reduce the surface roughness of the InGaAs film at around 1.5 nm RMS. HR-XRD characterization on the transferred InGaAs layer indicates that the layer remains crystalline.

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InGaAs,Smart CutTM,direct bonding,thin layer transfer

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300 mm InGaAsOI substrate fabrication using the Smart CutTM technology

300 mm InGaAsOI substrate fabrication using the Smart Cut^TM technology