A Novel Flash-Based Fpga Technology With Deep Trench Isolation

Kyung Joonhan, N Chan,Sungrae Kim,Ben Leung, V Hecht, B Cronquist

2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP(2007)

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摘要
A highly scalable flash-based Field Programmable Gate Array (FPGA) technology has been achieved with Deep Trench Isolation (DTI). The DTI allows for a reduced cell size and enables Independent Pwell (IPW) array operation. The IPW FPGA array operation requires less than +/- 10V during Uniform Channel FN-FN programming and shows negligible gate disturb. Additionally, it eliminates Gate-Induced Drain Leakage (GIDL) during programming. Characterization of a FPGA cell and array with 90nm design rules is demonstrated with excellent electrical characteristics.
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关键词
field programmable gate array,design rules,field programmable gate arrays
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