86 Ghz Static And 110 Ghz Dynamic Frequency Dividers In Sige Bipolar Technology

H Knapp, M Wurzer, Tf Meister,K Aufinger, J Bock, S Boguth,H Schafer

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3（2003）

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摘要

We present static and dynamic frequency dividers manufactured in a 200 GHz f(T) SiGe bipolar technology. The static divider has a divide ratio of 32 and operates up to 86.2 GHz. The dynamic divider is based on regenerative frequency division and has a divide ratio of two. It operates up to 110 GHz (limited by the measurement equipment). The power consumption of the static and dynamic frequency dividers is 900 mW and 310 mW, respectively.

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master slave,integrated circuit design

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