Current Status And Future Prospect For Thin Film Silicon Based Photovoltaic Module Manufacturing Technology At Hanergy
2015 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE(2015)
摘要
We report the recent progress in the development of a-Si/a-SiGe and a-Si/nc-Si multijunction solar cells on the product size substrate of 0.79m(2), and heterojunction solar cells on 152.3cm(2) n-type silicon wafer at Hanergy. Main experimental results cover three aspects: ( a) for a-Si/a-SiGe multijunction solar cells, significant improvement in a-Si/a-SiGe triple junction PV module efficiency by optimizing a-Si and a-SiGe component cell performance, (b) for a-Si/nc-Si double junction solar cells, optimization of a-Si thin film and doped layer/buffer layer used for a-Si top cells, and device quality nc-Si bottom cells, and (c) for heterojunction solar cell, development of intrinsic a-Si for superior silicon wafer surface passivation, wafer surface texturing process, n-type a-Si thin films as window layers, and ITO layers. We attained 11% initial total area efficiency for a-Si/a-SiGe triple junction modules, and 12.8% initial total area efficiency for a-Si/nc-Si double junction modules, and 21.7% total area efficiency for heterojunction solar cells using n-type wafers.
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silicon
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