Fabrication of CIGS thin film by mixed‐source pellet

The CuIn1-xGaxSe2 (CIGS) solar cells show a good spectral response in a wide range of the solar spectrum and the bandgap of CIGS. It can be adjusted from 1.0 eV to 1.7 eV by increasing the gallium-to-indium ratio of the absorber. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to mixed source pellet method. The CIGS absorber layer was deposited for using by E-beam evaporator on the ITO glass substrate. For crystallization of CIGS thin film, we measured SEM, EDS and XRD.