Optical and structural properties of In0.64Ga0.36As/AlxGa1−xAs(x≤0.2)/AlAsSbcoupled double quantum wells

We have studied optical and structural properties of In0.64Ga0.36As/AlxGa1-xAs(x <= 0.2)/AlAsSb coupled double quantum wells (CDQWs) for controlling the interband transition energy of CDQWs as well as changing the residual strain of CDQWs. By changing Al composition of AlxGa1-xAs center barrier, the interband transition energy was successfully controlled due to changing coupling strength between the double quantum wells. Comparing with our previous study, In composition of InGaAs wells was reduced and consequently, residual strain of the CDQWs was also changed.