Characterization of Microcrystalline Transition from Amorphous Silicon as a Function of Hydrogen Dilution and Substrate Temperature of Hot-wire CVD

Keda Wang,Haoyue Zhang, Jian Zhang,Jessica M. Owens,Jennifer Weinberg-Wolf,Daxing Han,Lynn Gedvilas,Brent Nelson

AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002（2011）

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摘要

a-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of T s =250°C with varied hydrogen-dilution ratio, 0更多

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关键词

amorphous silicon,microcrystalline transition,substrate temperature,hot-wire

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