The Enhancement of Etch Rate of Silicon by Heavy Doping of Phosphorus and Arsenic Atoms during Cyclic Selective Epitaxial Growth of SiliconKyong Sei Lee, Byounggi Choi,H Park,C Chung,H S Jeong,H K Kang,Soonkwon Nam,B Kim,J J Han,Seulki Jeong,H K An, Yongcheol Kangmag(2012)引用 23|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要