Performance investigation of short-channel junctionless multigate transistors

Pedram Razavi,Giorgos Fagas,Isabelle Ferain,N Dehdashti Akhavan,Rong Yu,J P Colinge

international conference on ultimate integration on silicon（2011）

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摘要

We investigate the performance of short channel junctionless gate-all-around (GAA) transistors, by comparing the I_V characteristics, subthreshold swing and drain-induced barrier lowring (DIBL) of junctionless GAA transistors with accumulation-mode GAA transistors. We also compare the I_V characteristics of junctionless GAA transistors for different wafer and transport orientations. MuGFETs are investigated for different wafer and channel orientation.

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关键词

transistors,semiconductor device modeling,process model,solid modeling,doping,drain induced barrier lowering,logic gate,field effect transistors,logic gates

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