Effect Of Cowp Cap Thickness On Via Yield And Reliability For Cu Interconnects With Cowp-Only Cap Process

J Gambino,J Wynne,S Smith, S Mongeon,P Pokrinchak,D Meatyard

PROCEEDINGS OF THE IEEE 2005 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE（2005）

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摘要

Via resistance and stress migration lifetime were characterized for a CoWP-only cap process (i.e. no dielectric cap) and a CoWP + SiN cap process. For the CoWP-only process, the via resistance and stress migration lifetime depended on the CoWP thickness. In order to achieve a tightly distributed via resistance and long stress migration lifetime, the data suggests that the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes.

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关键词

microelectronics,stress,cu,strips,capacitance,electric resistance,sin,scanning electron microscopy,copper,dielectrics

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