Silicon-On-Insulator (Soi) Junctionless Transistors

Unipolar junctionless transistors are thin-film, heavily doped (typically in the 10(19) cm(-3) range) semiconductor resistors with a gate electrode that controls the flow of current between source and drain. Device design is extremely simple as there are no PN junctions. Device operation relies on fully depleting the semiconductor using the workfunction of the gate material to turn the device off. When the device is turned on, current flows through the bulk of the thin film, and can be augmented by an accumulation current contribution. Junctionless transistors are characterized by reduced short-channel effects and present excellent subthreshold slope and low DIBL.