Predictive process simulation of cryogenic implants for leading edge transistor design

Two cryogenic implant TCAD-modules have been developed: (i) A continuum-based compact model targeted towards a TCAD production environment calibrated against an extensive data-set for all common dopants. Ion-specific calibration parameters related to damage generation and dynamic annealing were used and resulted in excellent fits to the calibration data-set. (ii) A Kinetic Monte Carlo (kMC) model including the full time dependence of ion-exposure that a particular spot on the wafer experiences, as well as the resulting temperature vs. time profile of this spot. It was calibrated by adjusting damage generation and dynamic annealing parameters. The kMC simulations clearly demonstrate the importance of the time-structure of the beam for the amorphization process: Assuming an average dose-rate does not capture all of the physics and may lead to incorrect conclusions. The model enables optimization of the amorphization process through tool parameters such as scan speed or beam height.