Lithography with MeV Energy Ions for Biomedical Applications: Accelerator Considerations

S Sangyuenyongpipat,Harry J Whitlow, S T Nakagawa, Eiichi Yoshida

AIP Conference Proceedings(2009)

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摘要
MeV ion beam lithographies are very powerful techniques for 3D direct writing in positive or negtive photoresist materials. Nanometer-scale rough structures, or clear areas with straight vertical sidewalls as thin as a few 10's of nm in a resist of a few Inn to 100 gm thickness can be made. These capabilities are particularly useful for lithography in cellular- and sub-cellular level biomedical research and technology applications. It can be used for tailor making special structures such as optical waveguides, biosensors, DNA sorters, spotting plates, systems for DNA, protein and cell separation, special cell-growth substrates and microfluidic lab-on-a-chip devices. Furthermore MeV ion beam lithography can be used for rapid prototyping, and also making master stamps and moulds for mass production by hot embossing and nanoimprint lithography. The accelerator requirements for three different high energy ion beam lithography techniques are overviewed. We consider the special requirements placed on the accelerator and how this is achieved for a commercial proton beam writing tool.
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关键词
MeV ion beam lithography,Electrostatic Accelerator,lab-on-a-chip,microfluidics,cell growth substrate
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