Characterization of P-Type Buffer Layers for SiC Microwave Device Applications
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999(2011)
摘要
Low-loped p-type silicon carbide buffer layers are grown by chemical vapor deposition on conducting and semi-insulating substrates. Capacitance-voltage and electrical admittance techniques are developed for accurate non-destructive characterization. The electrical admittance techniques suggested are capable of measuring the resistivity in a very wide range, up to 7 orders of magnitude. MESFET devices using thick buffer layers on conducting substrates are reported with F t =8.4 GHz and F max =32 GHz.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要