Current Status of Field Aided Lateral Crystallization

As a low temperature crystallization process, the field-aided lateral crystallization (FALC) technique possesses outstanding advantages such as directional crystallization, high crystallization rate and inherent gettering effect owing to the effect of electric field and can lead on to high performance transistors. It turned out that the FALC behaviors resulted from the competition between electromigration effect and the magnitude of potential gradient. In order to demonstrate the feasibility of FALC process, an array of FALC processed poly-Si TFT was fabricated. The transistor characteristics were evaluated and compared to those fabricated without an electric field.