Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making sameDalong Zhao,Pushkar Ranade,Bruce Mcwilliamsmag（2013）引用 22|浏览1暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
