GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al[sub 2]O[sub 3] as gate dielectricPeide D Ye,Bin Yang, K K Ng,J Bude, G D Wilk,J C M Hwang,Subrata HalderApplied Physics Letters（2005）引用 24|浏览10暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
