Photon Quenching In Ingan Quantum Well Light Emitting Devices

This work provides experimental evidence for photon quenching in InGaN and discusses its relevance to efficiency droop problem in InGaN-based light emitters. An equilibrium rate equation model demonstrates that radiative efficiency for this loss mechanism not only has a similar dependence on carrier density as Auger recombination process, but it also possesses the right magnitude making it difficult to distinguish between the two and possibly leading to errors in interpretation. The impact of photon quenching processes on device performance is emphasized by demonstrating loss of efficiency for spectral regions where there is experimental evidence for photon quenching. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816757]