Electroreflectance Studies Of Inas Quantum Dots With Inxga1-Xas Capping Layer Grown By Metalorganic Chemical Vapor Deposition

Electroreflectance spectroscopy was used to study the effect of InxGa1-xAs capping layer on InAs quantum dots grown by metaloiganic chemical vapor deposition. The optical transitions of the quantum dots. and the InxGa1-xAs capping layer were well resolved. The energy shifts in the In,Gal,As capping layer show a different trend as compared to a series of referent InxGa1-xAs quantum wells. These results support the concept of strain-driven alloy decomposition during the InxGa1-xAs layer overgrowth. (C) 2005 American Institute of Physics.