Metal Gate: Hfo2 Metal-Oxide-Semiconductor Structures On High-Indium-Content Ingaas Substrate Using Physical Vapor Deposition

In this work, we studied the effects of postdeposition anneal (PDA) time on the material and electrical characteristics of the metal-oxide-semiconductor capacitor (MOSCAP) with high-k (HfO2) material on high-indium-content In0.52Ga0.48As. Thin equivalent oxide thickness (EOT similar to 1 nm) with excellent capacitance voltage (C-V) characteristics has been obtained. Indium content in InGaAs with high-k material and PDA time were correlated with C-V characteristics of TaN/physical vapor deposition HfO2/InGaAs MOSCAPs. It was found that high indium content resulted in improved C-V characteristics, EOT, hysteresis, and especially frequency dispersion (similar to 5%). (c) 2008 American Institute of Physics.