Light Extraction From Gan-Based Light Emitting Diode Structures With A Noninvasive Two-Dimensional Photonic Crystal

APPLIED PHYSICS LETTERS(2009)

引用 91|浏览9
暂无评分
摘要
A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while photoluminescence measurements show extracted modes emitted from the quantum wells which agree well with modeling. A light extraction improvement of 1.8 times is measured using this noninvasive PhC.
更多
查看译文
关键词
etching, gallium compounds, III-V semiconductors, light emitting diodes, nanolithography, nanopatterning, photoluminescence, photonic crystals, semiconductor quantum wells, semiconductor thin films, soft lithography, titanium compounds, wide band gap semiconductors
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要