Arsenic Delta-Doped Hgte/Hgcdte Superlattices Grown By Molecular Beam Epitaxy

G K O Tsen,C A Musca,J M Dell,J Antoszewski,L Faraone,C R Becker

APPLIED PHYSICS LETTERS（2008）

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摘要

Arsenic incorporation in HgTe/Hg0.05Cd0.95Te superlattices grown by molecular beam epitaxy (MBE) is reported. The incorporation was carried out by a delta-doping approach where arsenic was incorporated during MBE growth as acceptors. The superlattices were characterized via high resolution x-ray diffraction, Fourier transform infrared spectroscopy, secondary ion mass spectrometry, and magnetotransport Hall measurements coupled with the quantitative mobility spectrum analysis algorithm. 9 2008 American Institute of Physics.

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关键词

infrared spectra,mass spectra,x ray diffraction,electron transport,fourier transform infrared spectroscopy,spectrum analysis,hall effect,molecular beam epitaxy,superlattices,arsenic,fourier transform,secondary ion mass spectrometry

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