Solution Processed Ni-Doped Tio2 P-Type Channel In Field Effect Transistor Assembly With < 10 Nm Thin Ba0.5sr0.5tio3 Dielectric Layer

Solution processed field effect transistor structures were fabricated by inserting a Ba0.5Sr0.5TiO3 layer to form Ag/ZnO/Ba0.5Sr0.5TiO3/Ni2+:TiO2/n-Si assembly. Such assembly registered an on-to-off current ratio as large as 10(3) with very low off-state current similar to 10(-12) A. The low leakage current is attributed to the appreciably higher values of valence/conduction band off-set of Ba0.5Sr0.5TiO3/semiconductor heterojunction. The device response was studied as a function of temperature in the range of 25-175 degrees C. The hole diffusion coefficient and mobility of p-TiO2 was calculated similar to 10(-3) cm(2)/s and similar to 0.13-0.15 cm(-2) V-1 s(-1), respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3592736]