Effect Of Channel Doping Concentration And Thickness On Device Performance For In0.53ga0.47as Metal-Oxide-Semiconductor Transistors With Atomic-Layer-Deposited Al2o3 Dielectrics

We have investigated the channel doping concentration and channel thickness dependence of device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic layer deposited Al2O3 dielectrics. We found that undoped channel provides the highest drive current of 125 mA/mm for 5 mu m gate length. With proper substrate doping concentration (5x10(16)/cm(3)), reasonable subthreshold swing (104 mV/decade) can be achieved for 4.7 nm equivalent oxide thickness. Thinner InGaAs channel exhibits lowest off-current density of 4.0x10(-6) mA/mm.