Scattering Due To Schottky Barrier Height Spatial Fluctuation On Two Dimensional Electron Gas In Algan/Gan High Electron Mobility Transistors

A scattering mechanism related to the Schottky barrier height (SBH) spatial fluctuation of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is presented. We find that the low field mobility is on the order of 10(4)-10(6) cm(2)/Vs. The 2DEG transport properties are found to be influenced by both the mobility and 2DEG density variations caused by the SBH fluctuation. Our results indicate that a uniform Schottky contact is highly desired to minimize the influence of SBH inhomogeneity on the device performance. (C) 2013 AIP Publishing LLC.