Electrical Characterization Of Two Deep Electron Traps Introduced In Epitaxially Grown N-Gan During He-Ion Irradiation

Epitaxial n-GaN was irradiated with 5.4-MeV He ions. Capacitance-voltage (C-V) measurements showed that 5.4-MeV He ions remove free carriers at a rate of 6200 +/- 300 cm(-1) in the first micron below the surface. Deep level transient spectroscopy (DLTS) revealed that, in addition to the radiation-induced defects previously detected by DLTS at 0.18-0.20 eV below the conduction band, He-ion irradiation introduced two additional prominent defects, ER4 (E-C-0.78 eV) and ER5 (E-C-0.95 eV) at rates of 1510 +/- 300 and 3030 +/- 500 cm(-1), respectively. Capture cross-section measurements revealed that electron capture kinetics of ER5 is similar to that of a line defect. (C) 1998 American Institute of Physics. [S0003-6951(98)04151-5].