Stimulated Emission And Lasing From An Al0.13ga0.87n/Gan Double Heterostructure Grown On A Silicon Substrate

Stimulated emission and laser action with well developed longitudinal optical modes from an Al0.13Ga0.87N/GaN double heterostructure with a 25 nm GaN active layer grown on a silicon substrate by metal-organic chemical vapor deposition is demonstrated. Lasing was observed from cleaved platelets at room temperature with well resolved Fabry-Perot modes at a wavelength as short as 368 nm at room temperature. A clear threshold was observed in the plot of the emission intensity versus the pumping power at both 77 K and room temperature. The effective index of refraction during laser operation was measured to be 2.65.