Soft error reliability in advanced CMOS technologies-trends and challenges

Science China-technological Sciences(2014)

引用 25|浏览11
暂无评分
摘要
With the decrease of the device size, soft error induced by various particles becomes a serious problem for advanced CMOS technologies. In this paper, we review the evolution of two main aspects of soft error-SEU and SET, including the new mechanisms to induced SEUs, the advances of the MCUs and some newly observed phenomena of the SETs. The mechanisms and the trends with downscaling of these issues are briefly discussed. We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing, modeling and hardening assurance of soft error issues we have to address in the future.
更多
查看译文
关键词
soft error rate,direct ionization,indirect ionization,multiple errors,single event transient,hardening,challenges
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要